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A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFETs

✍ Scribed by Tahui Wang; Lu-Ping Chiang; Nian-Kai Zous; Charng-Feng Hsu; Li-Yuan Huang; Tien-Sheng Chao

No coin nor oath required. For personal study only.

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