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Damage formation in SiC ion implanted at 625 K

✍ Scribed by E. Wendler; Ph. Schöppe; Th. Bierschenk; St. Milz; W. Wesch; N.G. van der Berg; E. Friedland; J.B. Malherbe

No coin nor oath required. For personal study only.

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Damage formation in SiC ion implanted at 625&#xa0;K