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Ion-beam-induced damage formation in CdTe at a temperature of 15 K

✍ Scribed by C.W. Rischau; C.S. Schnohr; E. Wendler; W. Wesch


Book ID
113823376
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
578 KB
Volume
272
Category
Article
ISSN
0168-583X

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## Abstract We report on in‐situ investigations of a recrystallization process of amorphous and damaged crystalline parts generated during ion‐beam induced rippling on a Si(100) surface. The ripple structure was created by 60 keV ^40^Ar^+^ irradiation with a dose of ∼5 Γ— 10^17^ ions/cm^2^ at ion in