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Effects of implantation temperature and thermal annealing on the Ga+ ion beam induced optical contrast formation in a-SiC:H

✍ Scribed by Tsvetkova, T.; Wright, C.D.; Kitova, S.; Bischoff, L.; Zuk, J.


Book ID
123548668
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
500 KB
Volume
307
Category
Article
ISSN
0168-583X

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