Radiation damage in ZnO ion implanted at 15 K
✍ Scribed by E. Wendler; O. Bilani; K. Gärtner; W. Wesch; M. Hayes; F.D. Auret; K. Lorenz; E. Alves
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 383 KB
- Volume
- 267
- Category
- Article
- ISSN
- 0168-583X
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The correlation of radiation damage recovery with crystallographic orientation in magnesium oxide (MgO) single crystals during isochronal post-implantation annealing was investigated. Samples of (1 0 0), (1 1 0) and (1 1 1) MgO were implanted with 100 keV Ar + ions at room temperature and annealed i
Values of the e.m.f. for the cell without liquid junction: Pt|H 2 (p = 101.325 kPa)|HCl(m A ), GaCl 3 (m B ), H 2 O|AgCl|Ag, are reported at five different temperatures from 278.15 K to 318.15 K. The standard association constants K of the ion pair [GaCl] 2+ were determined by a linear extrapolation