Orientational crossover in heteroepitaxial ZnO/MgO(0 0 1) thin films deposited by radio frequency sputtering was examined by X-ray diffraction and scanning electron microscopy. At the initial stage of growth, highly strained c-domains with the (0 0 0 2) planes aligned to the surface normal were obse
Strain-driven (0 0 2) preferred orientation of ZnO nanoparticles in ion-implanted silica
β Scribed by M.A. Tagliente; M. Massaro
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 293 KB
- Volume
- 266
- Category
- Article
- ISSN
- 0168-583X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The recrystallization process of the phosphorus ion implantation-induced amorphous layer in 4H-SiC(1 1 2 Γ0) is investigated in the annealing temperature range from 660 to 720 Β°C by means of Rutherford backscattering spectrometry. The phosphorus ions are multiply implanted to p-type 4H-SiC(1 1 2 Γ0)
The correlation of radiation damage recovery with crystallographic orientation in magnesium oxide (MgO) single crystals during isochronal post-implantation annealing was investigated. Samples of (1 0 0), (1 1 0) and (1 1 1) MgO were implanted with 100 keV Ar + ions at room temperature and annealed i