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Structural and optical properties of 6H–SiC helium-implanted at 600 K

✍ Scribed by H.H. Zhang; C.H. Zhang; B.S. Li; L.H. Han; Y. Zhang


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
816 KB
Volume
268
Category
Article
ISSN
0168-583X

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In this work erbium ions were implanted into AlN films grown on sapphire with fluence range: (0.5-2) Â 10 15 at/cm À2 , ion energy range: 150-350 keV and tilt angle: 0°, 10°, 20°, 30°. The optical and structural properties of the films are studied by means of photoluminescence and Raman spectroscopy