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Structure and optical properties of sapphire implanted with boron at room temperature and 1000 °C

✍ Scribed by Carl J. McHargue; E. Alves; L.C. Ononye; C. Marques


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
247 KB
Volume
250
Category
Article
ISSN
0168-583X

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In this work erbium ions were implanted into AlN films grown on sapphire with fluence range: (0.5-2) Â 10 15 at/cm À2 , ion energy range: 150-350 keV and tilt angle: 0°, 10°, 20°, 30°. The optical and structural properties of the films are studied by means of photoluminescence and Raman spectroscopy