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CV and IV characteristics of MIS structures with pyrolytic SiO2 as dielectric

✍ Scribed by L.I. Popova; P.K. Vitanov; B.Z. Antov

Publisher
Elsevier Science
Year
1974
Tongue
English
Weight
273 KB
Volume
23
Category
Article
ISSN
0040-6090

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The effects of b-ray irradiation on the electrical characteristics of Au/SiO 2 /n-Si (MOS) structures have been investigated using capacitance-voltage (C-V) and conductance-voltage (G/x-V) measurements. The MOS structures were irradiated with beta rays at doses up to 30 kGy. The C-V and G/x-V charac