Effects of beta-ray irradiation on the C–V and G/ω–V characteristics of Au/SiO2/n-Si (MOS) structures

✍ Scribed by A. Tataroğlu; M.H. Bölükdemir; G. Tanır; Ş. Altındal; M.M. Bülbül

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 228 KB
• Volume: 254
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2006.11.073

✦ Synopsis

The effects of b-ray irradiation on the electrical characteristics of Au/SiO 2 /n-Si (MOS) structures have been investigated using capacitance-voltage (C-V) and conductance-voltage (G/x-V) measurements. The MOS structures were irradiated with beta rays at doses up to 30 kGy. The C-V and G/x-V characteristics were measured at high frequency (1 MHz) and room temperature before and after b-ray irradiation. The obtained results showed that b-irradiation resulted in an increase in the barrier height U B , interface states N ss and depletion layer width W D obtained from reverse bias C-V measurements. In addition, the voltage dependency of the series resistance R s profile for various radiation doses was obtained from admittance-based measurement method of (C-V and G/x-V). Both C-V and G/x-V characteristics indicate that the total dose radiation hardness of MOS structures may be limited by the decisive properties of the SiO 2 /Si interface to radiation-induced damage.