✦ LIBER ✦

Investigation of diode parameters using I–V and C–V characteristics of In/SiO2/p-Si (MIS) Schottky diodes

✍ Scribed by Ö.F. Yüksel; A.B. Selçuk; S.B. Ocak

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 387 KB
Volume: 403
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2008.01.039

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Characterization of current–voltage (I–V

Characterization of current–voltage (I–V) and capacitance–voltage–frequency (C–V–f) features of Al/SiO2/p-Si (MIS) Schottky diodes

✍ A. Tataroğlu; Ş. Altındal 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 180 KB

60Co γ irradiation effects on the curren

60Co γ irradiation effects on the current–voltage (I–V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes

✍ A. Tataroğlu; Ş. Altındal; M.M. Bülbül 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 290 KB

Extraction of Schottky diode (and p−n ju

Extraction of Schottky diode (and p−n junction) parameters from I–V characteristics

✍ E.K. Evangelou; L. Papadimitriou; C.A. Dimitriades; G.E. Giakoumakis 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 242 KB

Investigation of the electrical properti

Investigation of the electrical properties of a surface-type Al/NiPc/Ag Schottky diode using I–V and C–V characteristics

✍ Mutabar Shah; M.H. Sayyad; Kh.S. Karimov; M. Maroof-Tahir 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 312 KB

Temperature dependence of I-V and C-V ch

Temperature dependence of I-V and C-V characteristics of Ni/n-CdF2 Schottky barrier type diodes

✍ P. Cova; A. Singh 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 926 KB

Experimental analysis and 2D-simulation

Experimental analysis and 2D-simulation of C–V characteristics in Ag/poly(Si)/ITO/glass Schottky diode

✍ M. Amrani; N. Benseddik; Z. Benamara; R. Menezla; M. Chellali; S. Tizi; T. Moham 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 359 KB

A silver contact with polysilicon fabricated on glass substrates was investigated both experimentally and theoretically by means of measured and 2D-simulated C-V characteristics. The in situ phosphorus-doped polysilicon layer is grown by a low-pressure chemical vapor deposition (LPCVD) technique and