Experimental analysis and 2D-simulation of C–V characteristics in Ag/poly(Si)/ITO/glass Schottky diode

✍ Scribed by M. Amrani; N. Benseddik; Z. Benamara; R. Menezla; M. Chellali; S. Tizi; T. Mohammed-Brahim

• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 359 KB
• Volume: 121
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2005.03.004

✦ Synopsis

A silver contact with polysilicon fabricated on glass substrates was investigated both experimentally and theoretically by means of measured and 2D-simulated C-V characteristics. The in situ phosphorus-doped polysilicon layer is grown by a low-pressure chemical vapor deposition (LPCVD) technique and crystallized in a vacuum by thermal annealing. The measured C -2 -V characteristics of the Schottky contact at two frequencies reveals a linear behaviour at the 10 kHz curve and a distinct non-linear behaviour at the 300 kHz one. Extraction of the frequency independent capacitance by the Kevin method allows the determination of the values of doping concentration (N D = 5 × 10 18 cm -3 ) and Schottky barrier height (φ b = 0.65 eV). The 2D-numerical simulation code of the Schottky contact C-V characteristics is also developed by considering that the inter-granular traps density N T is localized in the grain boundaries. The effects of the film doping concentration and the trap states density are investigated.