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Cryogenic behavior of Ultrashort gate AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs HEMT's

✍ Scribed by P. Crozat; D. Bouchon; A. de Lustrac; F. Aniel; Y. Jin; R. Adde; G. Vernet; Y. Jin; B. Etienne; H. Launois; M. Van Hove; W. de Raedt; M. Van Rossum

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
281 KB
Volume
19
Category
Article
ISSN
0167-9317

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πŸ“œ SIMILAR VOLUMES

Accurate charge-control model for analys
Accurate charge-control model for analysis of noise properties for AlGaAs/GaAs hemt and AlGaAs/InGaAs phemt at microwave frequencies
✍ Vandana Guru; H. P. Vyas; Mridula Gupta; R. S. Gupta πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 154 KB

## Abstract An accurate charge‐control approach to analytical noise modeling of a high electron mobility transistor, which provides excellent results in agreement with the experimental data, is presented. The small‐signal parameters, and the drain and gate‐noise sources are calculated to determine