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Noise temperature modeling of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs

✍ Scribed by A.F.M. Anwar; Kuo-Wei Liu

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
303 KB
Volume
37
Category
Article
ISSN
0038-1101

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Accurate charge-control model for analys
Accurate charge-control model for analysis of noise properties for AlGaAs/GaAs hemt and AlGaAs/InGaAs phemt at microwave frequencies
✍ Vandana Guru; H. P. Vyas; Mridula Gupta; R. S. Gupta πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 154 KB

## Abstract An accurate charge‐control approach to analytical noise modeling of a high electron mobility transistor, which provides excellent results in agreement with the experimental data, is presented. The small‐signal parameters, and the drain and gate‐noise sources are calculated to determine