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A self-consistent calculation of the small signal parameters for AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs

✍ Scribed by Kuo-Wei Liu; A.F.M. Anwar

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
227 KB
Volume
37
Category
Article
ISSN
0038-1101

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πŸ“œ SIMILAR VOLUMES

An improved intrinsic small-signal equiv
An improved intrinsic small-signal equivalent circuit model of delta-doped AlGaAs/InGaAs/GaAs HEMT for microwave frequency applications
✍ Vandana Guru; Jyotika Jogi; Mridula Gupta; H. P. Vyas; R. S. Gupta πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 102 KB

## Abstract An improved model of a modified intrinsic equivalent circuit of delta‐doped AlGaAs/InGaAs/GaAs HEMT, which incorporates the additional capacitive effect physically present due to delta doping and a feedback resistor between gate and drain, is proposed. Admittance parameters of the devic