Accurate charge-control model for analysis of noise properties for AlGaAs/GaAs hemt and AlGaAs/InGaAs phemt at microwave frequencies
✍ Scribed by Vandana Guru; H. P. Vyas; Mridula Gupta; R. S. Gupta
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 154 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
An accurate charge‐control approach to analytical noise modeling of a high electron mobility transistor, which provides excellent results in agreement with the experimental data, is presented. The small‐signal parameters, and the drain and gate‐noise sources are calculated to determine the noise coefficients, minimum noise figure F~min~ and minimum noise temperature T~min~. The influence of drain current, frequency, and device parameters upon F~min~ and T~min~ for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is presented. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 489–494, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20346