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Fabrication of nanometer width GaAs/AlGaAs and InGaAs/InP quantum wires

✍ Scribed by B.E. Maile; A. Forchel; R. Germann; A. Menschig; K. Streubel; F. Scholz; G. Weimann; W. Schlapp

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
356 KB
Volume
6
Category
Article
ISSN
0167-9317

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An AlGaAs(90 Γ…)/GaAs(45 Γ…) quantum wire superlattice (QWR-SL) with excellent size uniformity is grown on a 4.8 Β΅m pitch V-grooved substrate by flow rate modulation epitaxy at a specific growth temperature (∼630 β€’ C). In the low temperature (12 K) photoluminescence spectrum of the AlGaAs(90 Γ…)/GaAs(4