Fabrication and optical properties of qu
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S.R. Andrews; H.E.G. Arnot
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Article
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1991
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Elsevier Science
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English
⚖ 487 KB
We describe photoluminescence measurements made on mesa geometry quantum dots and wires with exposed side walls fabricated by laterally patterning undoped GaAs/A1GaAs quantum wells using electron beam lithography and dry etching. At low temperature the photoluminescence efficiency of many but not al