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Morphology and optical properties of strained InGaAs quantum wires

✍ Scribed by R. Mirin; M. Krishnamurthy; I.-H. Tan; J.E. Bowers; A.C. Gossard; E.L. Hu

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
470 KB
Volume
127
Category
Article
ISSN
0022-0248

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Optical investigations of strained InGaA
Optical investigations of strained InGaAs quantum wells
✍ G. Sek; M. Ciorga; J. Misiewicz; D. Radziewicz; R. Korbutowicz; M. Panek; M. TΕ‚a πŸ“‚ Article πŸ“… 1997 πŸ› John Wiley and Sons 🌐 English βš– 92 KB πŸ‘ 1 views

InGaAs/GaAs MOCVD-grown quantum wells have been investigated. Photoluminescence (PL) measurements have shown heavy-hole-related excitonic transitions within the temperature range from 10 to 100 K for all samples. In room-temperature photoreflectance (PR), sharp heavy-and lighthole excitonic transiti