Optical studies of strained InGaAs/GaAs single quantum wells
โ Scribed by W.Z. Shen; W.G. Tang; Z.Y. Li; X.C. Shen; S.M. Wang; T. Andersson
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 463 KB
- Volume
- 78
- Category
- Article
- ISSN
- 0169-4332
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๐ SIMILAR VOLUMES
InGaAs/GaAs MOCVD-grown quantum wells have been investigated. Photoluminescence (PL) measurements have shown heavy-hole-related excitonic transitions within the temperature range from 10 to 100 K for all samples. In room-temperature photoreflectance (PR), sharp heavy-and lighthole excitonic transiti
Saturation of the photoluminescence associated with the \(11 \mathrm{H}\) transition in the InGaAs single quantum wells is observed under high intensity optical excitation. At the onset of saturation, a spillover of the photoluminescence occurs into the GaAs cladding layers as the excitation intensi