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Optical studies of strained InGaAs/GaAs single quantum wells

โœ Scribed by W.Z. Shen; W.G. Tang; Z.Y. Li; X.C. Shen; S.M. Wang; T. Andersson


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
463 KB
Volume
78
Category
Article
ISSN
0169-4332

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InGaAs/GaAs MOCVD-grown quantum wells have been investigated. Photoluminescence (PL) measurements have shown heavy-hole-related excitonic transitions within the temperature range from 10 to 100 K for all samples. In room-temperature photoreflectance (PR), sharp heavy-and lighthole excitonic transiti

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Saturation of the photoluminescence associated with the \(11 \mathrm{H}\) transition in the InGaAs single quantum wells is observed under high intensity optical excitation. At the onset of saturation, a spillover of the photoluminescence occurs into the GaAs cladding layers as the excitation intensi