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Photoluminescence saturation in InGaAs/GaAs single quantum wells

โœ Scribed by A. Anedda; F. Congiu; E. Fortin; A. Mura; A.P. Roth

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
198 KB
Volume
13
Category
Article
ISSN
0749-6036

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โœฆ Synopsis

Saturation of the photoluminescence associated with the (11 \mathrm{H}) transition in the InGaAs single quantum wells is observed under high intensity optical excitation. At the onset of saturation, a spillover of the photoluminescence occurs into the GaAs cladding layers as the excitation intensity is increased. The measurements are used to determine a limiting value of the quantum efficiency of the quantum-well associated photoluminescence.

๐Ÿ“œ SIMILAR VOLUMES

Photoluminescence studies of self-assemb
Photoluminescence studies of self-assembled InAs quantum dots formed on InGaAs/GaAs quantum well
โœ X. Mu; Y. J. Ding; Z. Wang; G. J. Salamo ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 398 KB

We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum