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Optical orientation of holes and electrons in strained layer InGaAs/GaAs quantum wells

✍ Scribed by A.M. Vasil'ev; F. Daiminger; J. Straka; A. Forchel; V.P. Kochereshko; G.L. Sandler; I.N. Uraltsev

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 171 KB
Volume: 13
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1993.1019

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