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Cross-polarization imaging and micro-raman detection of defects in the epitaxy of 4H-SiC

✍ Scribed by O. J. Glembocki; S. M. Prokes; R. E. Stahlbush; M. F. Macmillan


Book ID
107453407
Publisher
Springer US
Year
2005
Tongue
English
Weight
439 KB
Volume
34
Category
Article
ISSN
0361-5235

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## Abstract The identity and characteristics of the lifetime limiting defects in n‐type 4H‐SiC epitaxial layers are of particular current interest, due to the suitability of this material for high‐power, solid‐state switching devices. Much work has been done in the past decade to identify the spect