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Copper thin films prepared by chemical vapour deposition from copper dipivalylmethanate

✍ Scribed by T. Maruyama; Y. Ikuta


Book ID
104743254
Publisher
Springer
Year
1993
Tongue
English
Weight
512 KB
Volume
28
Category
Article
ISSN
0022-2461

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✦ Synopsis


Copper thin films were prepared by a low-temperature atmospheric-pressure chemical vapour deposition method. The raw material was copper dipivalylmethanate which is volatile and thermally stable. At a reaction temperature above 220 ~ polycrystalline copper films can be obtained by hydrogen reduction of the raw material. The resistivity of the film was in the range 1.7-2.7 las "} cm.


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✍ T. Maruyama; T. Shirai πŸ“‚ Article πŸ“… 1995 πŸ› Springer 🌐 English βš– 493 KB

Copper thin films were prepared by a low-temperature atmospheric pressure chemical vapour deposition method. The raw material was copper (11) acetylacetonate. At a reaction temperature above 220 ~ polycrystalline copper films can be obtained by hydrogen reduction of the raw material. The resistivity