Copper thin films were prepared by a low-temperature atmospheric pressure chemical vapour deposition method. The raw material was copper (11) acetylacetonate. At a reaction temperature above 220 ~ polycrystalline copper films can be obtained by hydrogen reduction of the raw material. The resistivity
β¦ LIBER β¦
Copper thin films prepared by chemical vapour deposition from copper dipivalylmethanate
β Scribed by T. Maruyama; Y. Ikuta
- Book ID
- 104743254
- Publisher
- Springer
- Year
- 1993
- Tongue
- English
- Weight
- 512 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0022-2461
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β¦ Synopsis
Copper thin films were prepared by a low-temperature atmospheric-pressure chemical vapour deposition method. The raw material was copper dipivalylmethanate which is volatile and thermally stable. At a reaction temperature above 220 ~ polycrystalline copper films can be obtained by hydrogen reduction of the raw material. The resistivity of the film was in the range 1.7-2.7 las "} cm.
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