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Controlled Growth of TaN, Ta 3 N 5 , and TaO x N y Thin Films by Atomic Layer Deposition

✍ Scribed by Ritala, Mikko; Kalsi, Pia; Riihelä, Diana; Kukli, Kaupo; Leskelä, Markku; Jokinen, Janne

Book ID
127152684
Publisher
American Chemical Society
Year
1999
Tongue
English
Weight
85 KB
Volume
11
Category
Article
ISSN
0897-4756

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Controlled Growth of TaN, Ta 3 N 5 , and
Controlled Growth of TaN, Ta 3 N 5 , and TaO x N y Thin Films by Atomic Layer Deposition
✍ Ritala, Mikko; Kalsi, Pia; Riihelä, Diana; Kukli, Kaupo; Leskelä, Markku; Jokine 📂 Article 📅 1999 🏛 American Chemical Society 🌐 English ⚖ 85 KB

TaN, Ta 3 N 5 , and TaO x N y films were deposited by the atomic layer deposition technique. The alternate surface reactions between TaCl 5 and NH 3 resulted in Ta 3 N 5 films, but when elemental zinc, serving as an additional reducing agent, was supplied on the substrates between the TaCl 5 and NH