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Atomic layer deposition of TaN and Ta3N5 using pentakis(dimethylamino)tantalum and either ammonia or monomethylhydrazine

✍ Scribed by Ziwen Fang; Helen C. Aspinall; Rajesh Odedra; Richard J. Potter


Book ID
116629964
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
749 KB
Volume
331
Category
Article
ISSN
0022-0248

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πŸ“œ SIMILAR VOLUMES


Controlled Growth of TaN, Ta 3 N 5 , and
✍ Ritala, Mikko; Kalsi, Pia; RiihelΓ€, Diana; Kukli, Kaupo; LeskelΓ€, Markku; Jokine πŸ“‚ Article πŸ“… 1999 πŸ› American Chemical Society 🌐 English βš– 85 KB

TaN, Ta 3 N 5 , and TaO x N y films were deposited by the atomic layer deposition technique. The alternate surface reactions between TaCl 5 and NH 3 resulted in Ta 3 N 5 films, but when elemental zinc, serving as an additional reducing agent, was supplied on the substrates between the TaCl 5 and NH