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Comparison of dry etching of III-V semiconductors in ICl/Ar and IBr/Ar electron cyclotron resonance plasmas

✍ Scribed by J. W. Lee; J. Hong; E. S. Lambers; C. R. Abernathy; S. J. Pearton; W. S. Hobson; F. Ren

No coin nor oath required. For personal study only.

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