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Comparison of damage in the dry etching of GaAs by conventional reactive ion etching and by reactive ion etching with an electron cyclotron resonance generated plasma

✍ Scribed by Cheung, R.


Book ID
121308017
Publisher
AVS (American Vacuum Society)
Year
1989
Tongue
English
Weight
771 KB
Volume
7
Category
Article
ISSN
0734-211X

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