A study of the compositional changes in chemically etched, Ar ion bombarded and reactive ion etched GaAs(100) surfaces by means of ARXPS and LEISS

✍ Scribed by J.L. Sullivan; W. Yu; S.O. Saied

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 789 KB
• Volume: 90
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/0169-4332(95)00169-7