✦ LIBER ✦

Low damage dry etching of III–V compound semiconductors using electron cyclotron resonance discharges

✍ Scribed by S.J. Pearton; U.K. Chakrabarti; W.S. Hobson; C. Constantine; D. Johnson

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Lattice damage in III/V compound semicon

✍ Heinbach, M.; Kaindl, J.; Franz, G. 📂 Article 📅 1995 🏛 American Institute of Physics 🌐 English ⚖ 318 KB

Comparison of dry etching of III-V semic

✍ J. W. Lee; J. Hong; E. S. Lambers; C. R. Abernathy; S. J. Pearton; W. S. Hobson; 📂 Article 📅 1997 🏛 Springer US 🌐 English ⚖ 871 KB

High resolution dry etching of III–V sem

✍ S.J. Pearton 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 699 KB

7350. Plasma etching of III–V semiconduc

📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 150 KB