Dry etch damage in IIIโV semiconductors
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Evelyn L. Hu; Ching-Hui Chen
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Article
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1997
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Elsevier Science
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English
โ 478 KB
There has been steady progress in understanding the propagation of low energy, ion-induced damage into semiconductor substrates. Specially designed hetemstructure (quantum well) substrates allows us to trace the profile of damage into the material. A number of experiments have highlighted the surpri