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Lattice damage in III/V compound semiconductors caused by dry etching

โœ Scribed by Heinbach, M.; Kaindl, J.; Franz, G.


Book ID
121660143
Publisher
American Institute of Physics
Year
1995
Tongue
English
Weight
318 KB
Volume
67
Category
Article
ISSN
0003-6951

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Dry etch damage in IIIโ€“V semiconductors
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There has been steady progress in understanding the propagation of low energy, ion-induced damage into semiconductor substrates. Specially designed hetemstructure (quantum well) substrates allows us to trace the profile of damage into the material. A number of experiments have highlighted the surpri