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Dry etching of III–V semiconductors: influence of substrate temperature on the anisotropy and induced damage

✍ Scribed by P Van Daele; D Lootens; P Demeester

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 268 KB
Volume: 41
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(90)93818-4

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