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Dry etching of Hg1−xCdxTe using CH4/H2/Ar/N2electron cyclotron resonance plasmas

✍ Scribed by Robert C. Keller; M. Seelmann-Eggebert; H. J. Richter

Book ID
112814739
Publisher
Springer US
Year
1996
Tongue
English
Weight
984 KB
Volume
25
Category
Article
ISSN
0361-5235

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## Abstract Boron nitride (BN) films with high crystallinity and phase purity (>80 %) in the cubic phase were synthesized over large areas using fluorine chemistry and electron–cyclotron resonance (ECR) microwave plasma. Plasma‐enhanced fluorine chemistry was provided by a complex H~2~–BF~3~–N~2~–A