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Comparative optical studies of InGaAs/GaAs quantum wells grown by MBE on (100) and (311)A GaAs planes

โœ Scribed by A. Khatab; M. Shafi; R. H. Mari; M. Aziz; M. Henini; G. Patriarche; D. Troadec; M. Sadeghi; S. Wang

Book ID
112182378
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
475 KB
Volume
9
Category
Article
ISSN
1862-6351

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Investigation of metamorphic InGaAs quan
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โœ Yuxin Song; Shumin Wang; Xiaohui Cao; Zonghe Lai; Mahdad Sadeghi ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 958 KB

Strong enhancement of photoluminescence intensity from InGaAs quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates was demonstrated and investigated. The enhancement of photoluminescence intensity is found to be from both the weak strain effect and the stron