✦ LIBER ✦
Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE
✍ Scribed by Yuxin Song; Shumin Wang; Xiaohui Cao; Zonghe Lai; Mahdad Sadeghi
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 958 KB
- Volume
- 323
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
✦ Synopsis
Strong enhancement of photoluminescence intensity from InGaAs quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates was demonstrated and investigated. The enhancement of photoluminescence intensity is found to be from both the weak strain effect and the strong lattice hardening effect, indicating blocking effect of threading dislocations due to the N incorporation. Combination of this method with a strain compensated superlattice was proved to be effective in obtaining good quality metamorphic InGaAs quantum wells.