InAs self-organized quantum dots (QDs) and quantum dashes (QDHs) grown on GaAs (100), (211)B and (311)B substrates by molecular beam epitaxy at different growth temperatures (ยน ) have been investigated. QDs were observed after deposition of 2ML (or 4ML ) of InAs on GaAs (100) (or (311)B) at ยน rangin
โฆ LIBER โฆ
Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates
โ Scribed by M. Shafi; R. H. Mari; A. Khatab; D. Taylor; M. Henini
- Book ID
- 107470920
- Publisher
- Springer-Verlag
- Year
- 2010
- Tongue
- English
- Weight
- 298 KB
- Volume
- 5
- Category
- Article
- ISSN
- 1931-7573
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