InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates

✍ Scribed by S.P. Guo; A. Shen; Y. Ohno; H. Ohno

• Book ID: 104429178
• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 199 KB
• Volume: 2
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(98)00137-4

✦ Synopsis

InAs self-organized quantum dots (QDs) and quantum dashes (QDHs) grown on GaAs (100), (211)B and (311)B substrates by molecular beam epitaxy at different growth temperatures (¹ ) have been investigated. QDs were observed after deposition of 2ML (or 4ML ) of InAs on GaAs (100) (or (311)B) at ¹ ranging from 450°C to 530°C. The average density decreases and the average size increases monotonically with increasing ¹

. QDs with bimodal size distribution were formed when 6ML

of InAs was deposited on GaAs (2 1 1)B at lower ¹ . When the same amount of InAs was deposited at higher ¹ , however, QDHs were observed. The photoluminescence intensity of the QDs and QDHs showed similar temperature dependence, whereas the excitation density dependence showed quite different behaviors.