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Growth and characterization of AlAs/InAs superlattices on {100}, {211} and {311} GaAs substrates

✍ Scribed by P. Castrillo; G. Armelles; P.S. Domínguez; J. Meléndez; F. Briones; K. Ploog


Book ID
118365538
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
468 KB
Volume
267
Category
Article
ISSN
0039-6028

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InAs self-organized quantum dots (QDs) and quantum dashes (QDHs) grown on GaAs (100), (211)B and (311)B substrates by molecular beam epitaxy at different growth temperatures (¹ ) have been investigated. QDs were observed after deposition of 2ML (or 4ML ) of InAs on GaAs (100) (or (311)B) at ¹ rangin