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Growth of GaAs, InAs, and GaAs/InAs superlattice structures at low substrate temperature by MOVPE

✍ Scribed by H. Ohno; S. Ohtsuka; A. Ohuchi; T. Matsubara; H. Hasegawa


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
383 KB
Volume
93
Category
Article
ISSN
0022-0248

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## Abstract We present the results of a comprehensive study carried out on morphological, structural and optical properties of InAs/GaAs quantum dot structures grown by Molecular Beam Epitaxy. InAs quantum dots were deposited at low growth rate and high growth temperature and were capped with InGaA