In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum d
β¦ LIBER β¦
Growth and characterization of InAs columnar quantum dots on GaAs substrate
β Scribed by Li, L. H.; Patriarche, G.; Rossetti, M.; Fiore, A.
- Book ID
- 120209499
- Publisher
- American Institute of Physics
- Year
- 2007
- Tongue
- English
- Weight
- 452 KB
- Volume
- 102
- Category
- Article
- ISSN
- 0021-8979
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