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Growth and characterization of bilayer InAs/GaAs quantum dot structures

✍ Scribed by Liang, B. L. ;Wang, Zh. M. ;Mazur, Yu. I. ;Strelchuck, V. V. ;Salamo, G. J.

Book ID
105363815
Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
381 KB
Volume
203
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

One of the difficulties in understanding energy transfer in bilayer quantum dot structures is the complex role of carrier tunneling. This limitation is due to the fact that, for most studies to date, QDs in each layer have only one confined energy level making it difficult to study resonant tunneling effects. In this work, we have investigated the low growth‐rate technique to produce dislocation‐free very large QDs in the second layer that are characterized by several confined energy levels. The high quality surface morphology and optical behavior of these structures were demonstrated by AFM and PL measurements. (Β© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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