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Stress evolution during growth of bilayer self-assembled InAs/GaAs quantum dots

✍ Scribed by D.M. Schaadt; S. Krauss; R. Koch; K.H. Ploog


Publisher
Springer
Year
2006
Tongue
English
Weight
266 KB
Volume
83
Category
Article
ISSN
1432-0630

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The e ects of desorption and di usion of indium adatoms on the photoluminescence (PL) from InAs self-assembled quantum dots (QDs) are investigated by introducing growth interruptions after QD formation. Large, low-density and small, high-density QDs were grown by molecular beam epitaxy using low (0: