𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electrical characterization of InAs/GaAs quantum dot structures

✍ Scribed by E. Gombia; R. Mosca; S. Franchi; P. Frigeri; C. Ghezzi

Book ID
108215965
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
168 KB
Volume
26
Category
Article
ISSN
0928-4931

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Electrical and structural characterizati
Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs
✍ J.C. Rimada; M. Prezioso; L. Nasi; E. Gombia; R. Mosca; G. Trevisi; L. Seravalli πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 634 KB

In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15 Ga 0.85 As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening i

Growth and characterization of bilayer I
Growth and characterization of bilayer InAs/GaAs quantum dot structures
✍ Liang, B. L. ;Wang, Zh. M. ;Mazur, Yu. I. ;Strelchuck, V. V. ;Salamo, G. J. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 381 KB

## Abstract One of the difficulties in understanding energy transfer in bilayer quantum dot structures is the complex role of carrier tunneling. This limitation is due to the fact that, for most studies to date, QDs in each layer have only one confined energy level making it difficult to study reso