In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15 Ga 0.85 As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening i
✦ LIBER ✦
Instability of electrical characteristics of GaAs/InAs quantum dot structures
✍ Scribed by L. Dózsa; Zs. J. Horváth; E. Gombia; R. Mosca; S. Franchi; P. Frigeri; V. Raineri; F. Giannazo
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 130 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1862-6351
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The electron-and hole-related electrical activity of the InAs/GaAs quantum dot system has been demonstrated with a use of the highresolution Laplace and conventional DLTS methods combined with below GaAs bandgap illumination. Without the illumination, the DLTS signal refers to the emission process o