𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Instability of electrical characteristics of GaAs/InAs quantum dot structures

✍ Scribed by L. Dózsa; Zs. J. Horváth; E. Gombia; R. Mosca; S. Franchi; P. Frigeri; V. Raineri; F. Giannazo


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
130 KB
Volume
2
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Electrical and structural characterizati
✍ J.C. Rimada; M. Prezioso; L. Nasi; E. Gombia; R. Mosca; G. Trevisi; L. Seravalli 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 634 KB

In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In 0.15 Ga 0.85 As quantum dot (QD) structures having InAs coverages of 2.0 and 3.0 ML that are, respectively, below and above the expected critical value for QD ripening i

Electron- and hole-related electrical ac
✍ P. Kruszewski; L. Dobaczewski; V.P. Markevich; C. Mitchell; M. Missous; A.R. Pea 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 131 KB

The electron-and hole-related electrical activity of the InAs/GaAs quantum dot system has been demonstrated with a use of the highresolution Laplace and conventional DLTS methods combined with below GaAs bandgap illumination. Without the illumination, the DLTS signal refers to the emission process o