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Variations in critical coverage for InAs/GaAs quantum dot formation in bilayer structures

✍ Scribed by P.B Joyce; T.J Krzyzewski; P.H Steans; G.R Bell; J.H Neave; T.S Jones

Book ID
108341701
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
437 KB
Volume
244
Category
Article
ISSN
0022-0248

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Optical properties of wetting layers in
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The optical transitions of the wetting layers in two-fold self-assembled InAs=GaAs quantum dot samples are studied as a function of GaAs spacer thickness by various methods. The absorption related studies by photore ectance and selective photoluminescence excitation spectroscopy reveal already for t