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Optical properties of wetting layers in stacked InAs/GaAs quantum dot structures

✍ Scribed by A.T Winzer; R Goldhahn; G Gobsch; H Heidemeyer; O.G Schmidt; K Eberl

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
95 KB
Volume
13
Category
Article
ISSN
1386-9477

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✦ Synopsis

The optical transitions of the wetting layers in two-fold self-assembled InAs=GaAs quantum dot samples are studied as a function of GaAs spacer thickness by various methods. The absorption related studies by photore ectance and selective photoluminescence excitation spectroscopy reveal already for thick barriers, for which coupling e ects can be excluded, two energetically separated heavy-hole transitions. This splitting indicates the formation of two wetting layers during growth with a 10% di erence in width and re ects strain ΓΏeld interaction between the island layers. Thin spacer layer samples show in addition the expected wetting layer coupling as conΓΏrmed by subband calculations.

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