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High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers

✍ Scribed by Wei-Sheng Liu; Hong-Ming Wu; Yu-Ann Liao; Jen-Inn Chyi; Wen-Yen Chen; Tzu-Min Hsu

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 476 KB
Volume: 323
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.10.136

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✦ Synopsis

This study investigates the feasibility of growing high quality columnar InAs/GaAsSb quantum dots (QDs) on a GaAs (1 0 0) substrate using a molecular beam epitaxial system. Structural and photoluminescence (PL) studies are conducted on vertically aligned, ten-period InAs quantum dot (QD) stacks with two different overgrown layer designs. Experimental results indicate an increased dot density of 5 Â 10 10 cm À 2 with completely suppressed coalescences in vertically aligned InAs quantum dots capped by a GaAsSb layer. This finding demonstrates a columnar dot structure with an enhanced luminescent intensity, activation energy, and narrow spectral line width of 22 meV.

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