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Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates

✍ Scribed by Xu, S.J.; Chua, S.J.; Xiong Zhang; Zhang, Z.H.; Luo, C.P.; Yuan, Z.L.; Xu, Z.Y.; Zhou, J.M.

Book ID
117866024
Publisher
IEEE
Year
1997
Tongue
English
Weight
70 KB
Volume
3
Category
Article
ISSN
1077-260X

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✍ S.P. Guo; A. Shen; Y. Ohno; H. Ohno πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 199 KB

InAs self-organized quantum dots (QDs) and quantum dashes (QDHs) grown on GaAs (100), (211)B and (311)B substrates by molecular beam epitaxy at different growth temperatures (ΒΉ ) have been investigated. QDs were observed after deposition of 2ML (or 4ML ) of InAs on GaAs (100) (or (311)B) at ΒΉ rangin