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Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates

✍ Scribed by Lu Wang; Meicheng Li; Min Xiong; Liancheng Zhao

Book ID
107470433
Publisher
Springer-Verlag
Year
2009
Tongue
English
Weight
274 KB
Volume
4
Category
Article
ISSN
1931-7573

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InAs quantum dots and dashes grown on (1
InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates
✍ S.P. Guo; A. Shen; Y. Ohno; H. Ohno πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 199 KB

InAs self-organized quantum dots (QDs) and quantum dashes (QDHs) grown on GaAs (100), (211)B and (311)B substrates by molecular beam epitaxy at different growth temperatures (ΒΉ ) have been investigated. QDs were observed after deposition of 2ML (or 4ML ) of InAs on GaAs (100) (or (311)B) at ΒΉ rangin