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Charge Trapping in High- Gate Stacks Due to the Bilayer Structure Itself

✍ Scribed by Jameson, J.R.; Griffin, P.B.; Plummer, J.D.; Nishi, Y.


Book ID
114618345
Publisher
IEEE
Year
2006
Tongue
English
Weight
482 KB
Volume
53
Category
Article
ISSN
0018-9383

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